Search results for "Effective mass"
showing 10 items of 68 documents
Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure an…
2010
WOS: 000280235800010
Quantum-well states in ultrathin Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces
2002
Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12 monolayers have been grown. Angle resolved photoemission spectroscopy has been used to study the valence band electronic properties of these films. Well-defined Ag sp quantum-well states (QWS) have been observed at discrete energies between 0.5-2eV below the Fermi level, and their dispersions have been measured along the GammaK, GammaMM'and GammaL symmetry directions. QWS show a parabolic bidimensional dispersion, with in-plane effective mass of 0.38-0.50mo, along…
Atomic lattice excitons: from condensates to crystals
2007
We discuss atomic lattice excitons (ALEs), bound particle-hole pairs formed by fermionic atoms in two bands of an optical lattice. Such a system provides a clean setup to study fundamental properties of excitons, ranging from condensation to exciton crystals (which appear for a large effective mass ratio between particles and holes). Using both mean-field treatments and 1D numerical computation, we discuss the properities of ALEs under varying conditions, and discuss in particular their preparation and measurement.
Magnetic quantum criticality in quasi-one-dimensional Heisenberg antiferromagnet Cu (C4H4N2)( NO 3)2
2016
We analyze exciting recent measurements [Phys. Rev. Lett. 114 (2015) 037202] of the magnetization, differential susceptibility and specific heat on one dimensional Heisenberg antiferromagnet Cu(C4H4N2)(NO3)2 (CuPzN) subjected to strong magnetic fields. Using the mapping between magnons (bosons) in CuPzN and fermions, we demonstrate that magnetic field tunes the insulator towards quantum critical point related to so-called fermion condensation quantum phase transition (FCQPT) at which the resulting fermion effective mass diverges kinematically. We show that the FCQPT concept permits to reveal the scaling behavior of thermodynamic characteristics, describe the experimental results quantitativ…
Dipole surface plasmon in K+N clusters
1992
Abstract The technique of sum rules has been used to investigate the dipole surface plasmon for K + N clusters within a Density Functional Theory and the spherical jellium model. The role played by non-local effects is discussed comparing the results obtained from different functionals. Band-structure and core-polarization effects have been phenomenologically included in the calculation by means of an electron effective mass and a dielectric constant. Comparison with recent experimental data is presented.
Optimal damping coefficient for a class of continuous contact models
2020
AbstractIn this study, we develop an analytical formula to approximate the damping coefficient as a function of the coefficient of restitution for a class of continuous contact models. The contact force is generated by a logical point-to-point force element consisting of a linear damper connected in parallel to a spring with Hertz force–penetration characteristic, while the exponent of deformation of the Hertz spring can vary between one and two. In this nonlinear model, it is assumed that the bodies start to separate when the contact force becomes zero. After separation, either the restitution continues or a permanent penetration is achieved. Therefore, this model is capable of addressing …
INFLUENCE OF THE CHEMICAL POTENTIAL ON THE CARRIER EFFECTIVE MASS IN THE THERMOELECTRIC SOLID SOLUTION Cu2Zn1-xFexGeSe4
2013
In this paper, we describe the synthesis and characterization of the solid solution Cu 2 Zn 1-x Fe x GeSe 4. Electronic transport data have been analyzed using a single parabolic band model and have been compared to Cu 2+x Zn 1-x GeSe 4. The effective mass of these undoped, intrinsically hole conducting materials increases linearly with increasing carrier concentration, showing a non-parabolic transport behavior within the valence band.
Band-to-Band and Band-to-Acceptor Photoluminescence Studies in InSe under Pressure
1999
We report on photoluminescence (PL) measurements under pressure on p-type N-doped InSe at 10 K and on n-type Si-doped InSe at room temperature. Low-temperature PL of N-doped InSe is dominated by a band-to-acceptor peak. From the pressure dependence of the ionization energy of the N related shallow acceptor, the pressure change of the hole effective mass is estimated through the Gerlach-Pollmann model for hydrogenic levels in uniaxial crystals and discussed in the framework of a k p model. Room temperature PL in Si-doped InSe is dominated by a band-to-band peak exhibiting a pressure shift in agreement with previous works. This PL peak has been measured up to 7 GPa and a steep reversible decr…
High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy
2013
We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanis…
Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings
2007
We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.